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June 1966 HIROE OSAFUNE ETAL ELECTRICAL DEVICE HAVING THIN FILMS EXHIBITING RESISTANCE, CAPACITANCE AND INDUCTANCE Filed Jan. 23, 1963 2 Sheets-Sheet l r m 0. AM a FIG.4

IN VENTOR5 HIROE 05A Fl/A/E 7' 0511/0 KU/POSA WA [CH/E440 9454/ A T 7' ORA/E Y5 3,258,723 BITING CE June 8, 1965 HIROE OSAFUNE ETAL ELECTRICAL D THIN FILMS E RESISTAN CE AND INDUC Filed Jan. 23, 1963 EVICE HAVING GE, CAPACITAN 2 Sheets-Sheet 2 P WA N H W. 4 5

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.SAWA 5A INVEIXEORS BY ICH/EMON 5A WW M 7 ATTO A/EYS United States Patent 3,258,723 ELECTRICAL DEVICE HAVING THIN FILMS EX- HIBITING RESISTANCE, CAPACITANCE AND INDUCTANCE Hiroe Osafune, Toshio Kurosawa, and Iclnernon Sasaln, Tokyo, Japan, assignors to Nippon Electric Company Limited, Tokyo, .lapan, a corporation of Japan Filed Jan. 23, 1963, Ser. No. 253,471 Claims priority, application Japan, Jan. 30, 1962, 37/ 3,453 1 Claim. (Cl. 333-70) This invention relates to a miniature device having a plurality of electrical components formed as an integral part thereof, and more particularly to such a device which is provided with thin films for modifying the electrical characteristics of the device in a desired manner.

In micro-miniaturized equipment it is desirable to employ R-C circuits in lieu of L-C circuits whenever possible since the resistance component can be made much smaller than the inductance. The inductance, however, is intrinsically different from the resistor in frequency characteristics and therefore the use of the resistor has the disadvantage that different circuit characteristics are obtained.

Accordingly, it is an object of this invention to provide means for compensating for differences in circuit characteristics when a resistance is employed in a circuit in lieu of an inductor.

It is a further object of our invention to provide an integrated circuit having inductance characteristics which is smaller than such circuits heretofore known having similar inductance characteristics.

All of the objects, features and advantages of this invention and the manner of attaining them will become more apparent and the invention itself will be best understood by reference to the following description of an embodiment of the invention taken in conjunction with the accompanying drawing, in which:

FIG. 1 is a circuit diagram of a band elimination filter;

FIG. 2a is a plan view of a semiconductor device which embodies the circut elements of FIG. 1;

FIG. 2b is a sectional view of the device of FIG. 2a taken on the line 2b2b thereof;

FIG. 3 illustrates a practical construction of a device made in accordance with the invention;

FIG. 4 is a sectional view of the device of FIG. 3 taken along the line 44 thereof, and

FIG. 5 is a circuit diagram illustrating the type of circuit that can be achieved in accordance with the teachings of the invention.

Throughout the various figures, like numerals indicate identical or similar parts.

In accordance with an aspect of the invention there is provided an integrated semiconductor device comprising a semiconductor body, said body including at least one junction therein formed of a P type conductivity region in contiguous relationship with an N type conductivity region, terminal means connected to the regions forming said junction, and a layer of magnetic material disposed on the regions and adjacent vicinity said junc tion and insulated from said junction and said terminal means, to thereby impart an electrical inductance characteristic to said device.

Referring now to the drawings, FIG. 1 shows a band elimination filter which includes a resistance R designated by the numeral 3, a resistance R designated by the numeral 5 and a capacitance C indicated by the designation 2-3 and comprising five individual capacitor elements.

The individual components which make up the circuit of FIG. 1 are formed as a part of a single integrated block or body unit 1 shown in FIGS. 2a and 2b. The body 1 may be N-type silicon having formed therein, by diffustion of impurities for example, P-type domains 2 and 4 and N-type domains 3 and 5. The body is thus formed into an integrated block having two ring shaped NPN junctions.

FIG. 3 illustrates a practical construction utilizing the body or block 1 shown in FIGS. 2a and 2b for achieving the circuit of FIG. 1. In FIG. 3, lines 2, 3, 4 and 5 denote schematically the domains 2, 3, 4 and 5 of FIGS. 2a and 2b. The short closely spaced radial lines on selected domains indicate a metal coating such as for example aluminum, deposited on the surfaces of domains and each coating is deposited in such a manner as not to encroach upon the other domains. The terminal 7 is connected to one end of the domain 3 by the lead wire 8 to utilize the domain 3 as the resistance R of FIG. 1, while the other end is connected to the terminal 10 by the lead wire 9. These lead wires are so connected by means of small local metal coatings to the ends of the domain 3. By using the boundary of the domains 2 and 3, i.e. the P-N junction 2-3, the capacity C of FIG. 1 is formed. A metal coating 2a is coated on the domain 2 to serve as the conductor 2a of FIG. 1; this coating 2a is connected at one end to one end of the domain 5 by the lead wire 11. The other end of the domain 5 is connected to the terminal 13 by the lead wire 12. The resistance of the domain 5 serves as the resistance R of FIG. 1.

When the various connections are made as described above the circuit shown in FIG. 1 is of course produced. In actual practice, however, before the domains are interconnected, the body 1 is further treated in accordance with the principles of this inventon to thereby obtain a circuit somewhat similar to that of FIG. 1 but which also includes inductance characteristics. The circuit resulting from such treatment is shown in FIG. 5. This treatment will now be described. After the metal coatings have been evaporated on the domain 2 and on the end portions of the various other domains, a suitable insulating material 7, such as for example silica (SiO is deposited over the domains 2 and 3, except at the domain terminals, as shown in FIG. 4. Next a material 6 having magnetic properties, such as for example perrnalloy, is deposited, over the coating 7 to thereby form a multi-layer arcuate shaped region designated by the letters a, b, c, d, e, and f of FIG. 3. This region is generally horseshoe-shaped and does not extend over the central portion of the block. The various coatings 2a, 6 and 7 may be deposited by any suitable process, the evaporation technique however being preferred.

The film 6, as can be see-n from FIG. 5, produces an equivalent inductance in the form of a plurality of inductance elements L in series with the resistance R of FIG. 1, thereby improving the frequency characteristics of the circuit of FIG. 1. Special attention should be paid to the choice of film material 6, the method for depositing this film, and other factors, to thereby provide the most desirable inductance characteristics from this film.

Although this invention has been described with specific the semiconductor body without the use of such an insulating film.

Thus, while the foregoing description sets forth the principles of the invention in connection with specific apparatus, it is to be understood that the description is made only by way of example and not as a limitation of the scope of the invention as set forth in the objects thereof and in the accompanying claim.

What is claimed is:

An electrical device having a plurality of electrical circuit components formed integrally therewith comprising a semiconductor body of a given type conductivity,

said body having therein a plurality of domains also of said lgiven type conductivity and a plurality of domains having a type conductivity opposite to that of said given type, said domains comprising substantially concentric regions of generally circular shape, at least one of said regions being in the form of an extended circular are having opposite ends for receiving electrical connections, each of said domains of said opposite conductivity being in contact with one of said domains of said given type conductivity and also forming a barrier between such given type conductivity domain and the main portion of said body, each of said domains of said opposite type conductivity further forming one junction with said main body portion and another junction with the domain of given type conductivity with which it is associated,

conductive means interconnecting selected ones of said domains to thereby produce an electrical circuit within said device,

a layer of magnetic material in the form of an extended circular are, said layer being disposed in closely spaced overlying relationship with one of said domains of opposite type conductivity and with the domain of given type conductivity with which said domain of opposite type conductivity is associated, to thereby impart an electrical inductance characteristic to said device,

a metallic coating interposed between said layer and one of the domains from which said layer is closely spaced and also being in intimate contact with said latter mentioned domain, whereby an effective capacitance characteristic is imparted to said device,

and a coating of insulating material interposed between said metallic coating and said layer to thereby insulate said layer from said metallic coating.

References Cited by the Examiner UNITED STATES PATENTS 2,027,067 1/ 1936 Schubert 333-79 2,260,296 10/1941 Christopher et al. 33331 2,637,777 5/1953 Lelby et al 33379 2,744,970 5/ 1956 Shockley 40788.5 3,022,472 2/1962 Tanenbaum et al 333-18 3,060,327 10/1962 Dacey 307-88.5 3,148,344 9/1964 Kaufman 333-70 3,163,833 12/1964 Burson 33379 OTHER REFERENCES Electronics, May 13, 1960, Lathrop, Semi-Conductor Networks, pages 69-78.

Science, vol. 132, Oct. 21, 1960, Herwald, Integration of Circuit Functions, pages 1127-1133.

HERMAN KARL SAALBACH, Primary Examiner.

C. BARAFF, Assistant Examiner. 

